Optical proximity correction method and method of manufacturing extreme ultraviolet mask by using the same

A method of manufacturing an extreme ultraviolet (EUV) mask, comprising:

• generating a library for edge filters of a near field by using an electromagnetic field simulation;
• generating an any-angle edge filter by using the library;
• generating a first mask image by applying a thin mask approximation to a mask of a curvilinear pattern;
• determining whether the curvilinear pattern satisfies a reference;
• when the curvilinear pattern satisfies the reference, performing skewed Manhattanization to the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern;
• generating a final mask image by adding the second mask image to the first mask image;
• and
• exposing an EUV mask substrate by using the final mask image.

A method of manufacturing an extreme ultraviolet (EUV) mask, comprising:

• generating a library for edge filters of a near field by using an electromagnetic field simulation;
• generating an any-angle edge filter by using the library;
• generating a first mask image by applying a thin mask approximation to a mask of a curvilinear pattern;
• determining whether the curvilinear pattern satisfies a reference;
• when the curvilinear pattern satisfies the reference, performing a skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern;
• generating a final mask image by adding the second mask image to the first mask image;
• and
• performing a simulation by reflecting data of the final mask image to an optical proximity correction (OPC) model;
• transferring design data obtained by the simulation as mask tape-out (MTO) design data;
• preparing mask data based on the MTO design data;
• and
• exposing an EUV mask substrate based on the mask data.