Reflective mask blank and reflective mask
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShohei Mimura, Hideo Kaneko, Tsuneo Terasawa
Life of this patent
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Abstract
A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film containing tungsten, and another metal, a metalloid or a light element that is formed on the multilayer reflection film and absorbs the exposure light.
Claims15
A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as exposure light, comprising a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film that is formed on the multilayer reflection film and absorbs the exposure light, wherein
- the absorber film consists of
- (a) tungsten;
- and
- (b) at least one element selected from the group consisting of tantalum, molybdenum, vanadium, zirconium, ruthenium, gold, platinum, rhodium, silicon and germanium,
- (c) at least one light element selected from the group consisting of nitrogen, oxygen, carbon and hydrogen, or both (b) and (c).
Dependencies are inferred from the claim text.