Storage unit and method of manufacturing the same and three-dimensional memory

A method of manufacturing a storage unit, comprising:

• preparing a first conductivity-type substrate;
• forming a channel layer stacked on the first conductivity-type substrate in a first direction;
• forming a second conductivity-type conduction layer comprising a first part and a second part that are connected, the first part being located between the first conductivity-type substrate and the channel layer, and the second part being formed in a via hole passing through the channel layer;
• forming a channel passage layer, wherein the channel passage layer penetrates the channel layer and the first part of the second conductivity-type conduction layer in a negative direction of the first direction, and extends into an interior of the first conductivity- type substrate;
• and
• forming an insulating layer located in the channel layer, wherein the insulating layer surrounds a periphery of the channel passage layer,
• wherein a surface of the insulating layer facing the first conductivity-type substrate and in contact with the first part of the second conductivity-type conduction layer is flush with a bottommost surface of the channel layer facing the first conductivity-type substrate and in contact with the first part of the second conductivity-type conduction layer, and
• wherein the first conductivity-type substrate is a p-type substrate, and the second conductivity-type conduction layer is an n-type conduction layer, the first conductivity-type substrate is configured to provide a hole pumped into the channel passage layer so as to achieve an erasing operation, and the second conductivity-type conduction layer is configured to provide an electron pumped into the channel passage layer to achieve a reading operation.