High voltage isolated microelectronic device
AssigneeTexas Instruments Incorporated
InventorJeffrey Alan West
Life of this patent
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Abstract
A method forms a first voltage node of a high voltage component of a microelectronic device. The method also forms a plurality of dielectric layers. The method also forms a second voltage node of the high voltage component of the microelectronic device in a fourth position such that the plurality of dielectric layers is between the first voltage node and the second voltage node. During the forming a second voltage node step, a portion of a third layer in the plurality of dielectric layers, in a region outwardly positioned relative to the second voltage node, is removed to expose the second layer, in the plurality of dielectric layers, in the region.
Claims17
A microelectronic device, comprising:
- a first voltage node;
- a plurality of dielectric layers adjacent the first voltage node;
- and a second voltage node positioned such that the plurality of dielectric layers are between the first voltage node and the second voltage node, wherein the plurality of dielectric layers includes a first dielectric layer abutting the first voltage node and having a lateral length greater than a length of the first voltage node and including sidewalls extending to a second dielectric layer, the second dielectric layer being in the plurality of dielectric layers and abutting the first dielectric layer, the sidewalls having a profile that is not parallel to sidewalls of the first voltage node.
An integrated circuit, comprising:
- a first electrode of a capacitor over a semiconductor substrate;
- a second electrode of the capacitor located vertically over the first electrode;
- a plurality of dielectric layers between the first and second electrodes, the plurality of dielectric layers including:
- a first dielectric layer abutting the second electrode;
- and
- a second dielectric layer abutting the first dielectric layer,
- wherein the first dielectric layer extends laterally past the second electrode over the substrate to a recess in the second dielectric layer.
Dependencies are inferred from the claim text.