Methods for manufacturing semiconductor structures including isolation layer and semiconductor structures including isolation layer

A method for manufacturing a semiconductor structure, comprising:

• providing an insulating substrate;
• depositing an isolation layer on the insulating substrate by a physical vapor deposition process, the isolation layer comprising cobalt atoms and barrier atoms located at grain boundaries of the cobalt atoms;
• and
• depositing a copper-containing metal layer on the isolation layer,
• wherein the isolation layer is made of a cobalt-tungsten alloy, and the barrier atoms are tungsten atoms;
• wherein a content of tungsten in the cobalt-tungsten alloy is from 0.1 at % to 3.5 at %;
• wherein a temperature for depositing the isolation layer is from 150° C. to 350° C.;
• wherein the depositing a copper-containing metal layer on the isolation layer comprises:
• cooling the isolation layer to a temperature of from 10° C. to 30° C., and depositing the copper-containing metal layer at a temperature of from 10° ° C. to 30° C.