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US 12,114,508 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsPo-Kuang Hsieh, Shih-Hung Tsai, Chun-Hsien Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer on a substrate, forming a first trench and a second trench in the first IMD layer, forming a bottom electrode in the first trench and the second trench, forming a ferroelectric (FE) layer on the bottom electrode, and then forming a top electrode on the FE layer to form a ferroelectric random access memory (FeRAM).
Claims12
A method for fabricating a semiconductor device, comprising:
- forming a first inter-metal dielectric (IMD) layer on a substrate;
- forming a first trench and a second trench in the first IMD layer, wherein bottom surfaces of the first trench and the second trench expose the first IMD layer;
- forming a bottom electrode in the first trench and the second trench;
- forming a ferroelectric (FE) layer on the bottom electrode;
- and
- forming a top electrode on the FE layer to form a ferroelectric random access memory (FeRAM).
3 more elements
A semiconductor device, comprising:
- an inter-metal dielectric (IMD) layer on a substrate;
- and
- a ferroelectric random access memory (FeRAM) on the ILD layer, wherein the FeRAM comprises:
- a first trench and a second trench in the IMD layer, wherein bottom surfaces of the first trench and the second trench expose the first IMD layer;
- a bottom electrode in the first trench and the second trench;
- a ferroelectric (FE) layer on the bottom electrode;
- and
- a top electrode on the FE layer.
5 more elements
Dependencies are inferred from the claim text.