Semiconductor device having a butted contact and method of forming

A static random access memory (SRAM) cell, comprising:

• a first pull-up (PU) transistor comprising a first gate structure;
• a first pull-down (PD) transistor comprising the first gate structure;
• a second PU transistor comprising a second gate structure, wherein the second gate structure comprises a gate stack and gate spacers;
• a second PD transistor comprising the second gate structure;
• and
• a first butted contact, wherein the first butted contact electrically connects a first terminal of the first PU transistor to the second gate structure, wherein the first butted contact directly contacts each of a top surface and a sidewall of the gate stack.

A method of making a semiconductor structure, the method comprising;

• forming a first gate structure over a first active region in a substrate, wherein the first gate structure comprises a first gate stack and gate spacers;
• forming a second active region in the substrate, wherein the second active region is isolated from the first active region;
• depositing a dielectric layer over the substrate, wherein the dielectric layer extends over the first active region and the second active region;
• etching the dielectric layer to form an opening, wherein the opening exposes the second active region, a top surface of the first gate structure, and a sidewall of the first gate structure;
• and
• depositing a conductive material in the opening, wherein the conductive material directly contacts the top surface of the first gate structure and the sidewall of the first gate stack.