Pulsed etch process
AssigneeApplied Materials, Inc.
InventorsYifeng Zhou, Qian Fu
Life of this patent
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Abstract
Described herein is a method for etching a sample. The method includes performing a plasma etch pulse. The plasma etch pulse is performed by directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent towards the sample. While directing the gas flow, a bias power is applied to achieve a bias state for a first time period. Then, a source power is applied to achieve a source state for a second time period, and then no bias power and no source power is applied to achieve a recovery state for a third time period. The plasma etch pulse is repeated until a target amount of the sample is etched.
Claims16
A method of etching a sample comprising:
- performing a plasma etch pulse, comprising:
- directing a gas flow comprising silicon tetrachloride (SiCl4) and a diluent comprising Ar and He towards the sample;
- applying a bias power to achieve a bias state for a first time period while directing the flow of the SiCl4 and the diluent towards the sample;
- applying a source power to achieve a source state for a second time period;
- and
- applying no bias power and no source power to achieve a recovery state for a third time period;
- and
- repeating the plasma etch pulse until a target amount of the sample has been etched.
A method of etching a sample, comprising:
- performing a plasma etch pulse, comprising:
- applying a bias power to achieve a bias state for a first time period while directing a flow of a gas and a diluent towards the sample;
- applying a source power to achieve a source state for a second time period;
- and
- applying no bias power and no source power to achieve a recovery state for a third time period;
- and
- repeating the plasma etch pulse until a target amount of the sample has been etched,
- wherein no source power is applied during the bias state and wherein no bias power is applied during the source state and
- wherein the gas comprises SiCl4 and the diluent comprises Ar and He.
Dependencies are inferred from the claim text.