Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning

A method of forming a memory device, comprising:

• forming a first electrically conductive layer over a substrate;
• forming a two-dimensional array of memory cells over the first electrically conductive layer, wherein each of the memory cells comprises a vertical stack including a magnetic tunnel junction pillar structure and a selector-containing pillar structure;
• coating a continuous resist layer over the two-dimensional array of memory cells such that the continuous resist layer comprises a horizontally-extending planar resist layer overlying the first electrically conductive layer, a two-dimensional array of tubular resist portions laterally surrounding the two-dimensional array of memory cells, and a two-dimensional array of capping resist portions overlying the two-dimensional array of memory cells;
• patterning the continuous resist layer into discrete resist material portions by lithographic exposure and development, wherein the horizontally-extending planar resist layer is divided into a plurality of horizontally-extending planar resist portions having a respective pair of lengthwise edges laterally extending along a first horizontal direction and adjoined to a respective set of at least one tubular resist portion;
• and
• patterning the first electrically conductive layer into a plurality of first electrically conductive lines by etching portions of the first electrically conductive layer that are not covered by the discrete resist material portions.