Method for manufacturing semiconductor structure and semiconductor structure

A semiconductor structure, comprising:

• a substrate, the substrate having bit lines extending in a first direction;
• a dielectric layer and a contact layer located between adjacent bit lines of the bit lines, parts of the dielectric layer and parts of the contact layer being arranged at intervals in the first direction, and both the dielectric layer and the contact layer being in contact with the substrate;
• and
• a filling layer located in the contact layer, and the contact layer exposing a top surface of the filling layer;
• wherein the semiconductor structure is manufactured by a method comprising:
• providing the substrate, and forming the bit lines extending in the first direction and trenches located between the adjacent bit lines on the substrate;
• forming the dielectric layer and the contact layer filling the trenches, the parts of the dielectric layer and the parts of the contact layer being arranged at the intervals in the first direction, both the dielectric layer and the contact layer being in contact with the substrate, and the contact layer having first gaps;
• removing a second part of the contact layer, to expose the first gaps;
• forming the filling layer to fill the first gaps;
• and
• etching the contact layer and the filling layer back.