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US 12,002,753 B2Granted
Electronic fuse with passive two-terminal phase change material and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsKevin W. Brew, Lan Yu, Ruilong Xie, Kangguo Cheng
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Abstract
A semiconductor structure includes a first electrode; a second electrode; a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode to define a void within the dielectric material and between the first electrode and the second electrode; and a layer of phase change material on the at least one wall of the dielectric material and in contact with the first electrode and the second electrode.
Claims6
A semiconductor structure, comprising:
- a first electrode;
- a second electrode;
- a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode;
- and
- a layer of phase change material on and in contact with the at least one wall of the dielectric material and in contact with the first electrode and the second electrode, a material of the at least one wall configured for at least one of dewetting or agglomeration of the phase change material, the layer of phase change material defining a void within the dielectric material and between the first electrode and the second electrode, wherein the void is partially defined by a surface of at least one of the first electrode or the second electrode.
2 more elements
Dependencies are inferred from the claim text.