Wafer processing device and method

A wafer processing device, comprising:

• a spraying unit, configured to spray a photoresist-removing;
• solution so as to remove a photoresist on a surface of a wafer;
• and
• a heating unit, mounted to the spraying unit and configured to heat the photoresist-removing solution to a preset temperature;
• wherein the spraying unit comprises:
• a photoresist-removing solution nozzle, configured to spray the photoresist-removing solution so as to remove the photoresist, wherein the photoresist-removing solution comprises a mixed solution of sulfuric acid and hydrogen peroxide:
• a sulfuric acid pipeline, configured to provide sulfuric acid and connected to the photoresist-removing solution nozzle;
• a hydrogen peroxide pipeline, configured to provide hydrogen peroxide and connected to the photoresist-removing solution nozzle, wherein the photoresist-removing solution nozzle is further configured to spray the hydrogen peroxide;
• and
• a mixed solution pipeline, connected to the sulfuric acid pipeline and the hydrogen peroxide pipeline, respectively and connected to the photoresist-removing solution nozzle so that the mixed solution of sulfuric acid and hydrogen peroxide is formed and flows to the photoresist-removing solution nozzle;
• wherein the heating unit is mounted outside the mixed solution pipeline and configured to heat the mixed solution of sulfuric acid and hydrogen peroxide in the mixed solution pipeline;
• the heating unit comprises a barrier disposed around the photoresist-removing solution nozzle and at least two heating lamps evenly disposed on a surface of the barrier;
• and
• the at least two heating lamps are disposed toward a spraying direction of the mixed solution of sulfuric acid and hydrogen peroxide.