Catalyzed deposition of metal films
AssigneeApplied Materials, Inc.
InventorsSang Ho Yu, Seshadri Ganguli, Byunghoon Yoon, Wei Min Chen
Life of this patent
Estimating the term…
Abstract
Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.
Claims20
A ruthenium deposition method comprising:
- maintaining a substrate having a dielectric surface and a metal surface at a deposition temperature while sequentially exposing the substrate to an alkyl halide, the alkyl halide adsorbing to a surface of the substrate to form an activated substrate surface, then exposing the activated substrate surface to a ruthenium precursor to selectively form a ruthenium film on the metal surface over the dielectric surface, the ruthenium precursor having a decomposition temperature above the deposition temperature, and the alkyl halide comprising bromine or iodine, wherein the method is performed without the use of an oxygen-containing reactive gas.
A ruthenium deposition method comprising:
- exposing a substrate at a deposition temperature to an alkyl halide (R—X) to adsorb R and X on the substrate;
- desorbing R in the form of R—R or R;
- exposing the substrate to a ruthenium precursor (M—L);
- reacting M—L with the adsorbed X to form M—X;
- and
- reacting M—X with M—X to form M—M,
- wherein M—L is thermally stable at the deposition temperature, X is insoluble within M, the bond strength of M—L is less than M—X is less than M—M, and the deposited ruthenium has a purity of greater than or equal to about 97% ruthenium on an atomic basis.
A method of selectively depositing a ruthenium film, the method comprising:
- sequentially exposing a substrate having a first dielectric surface and a second metal surface to a ruthenium precursor and an alkyl halide while the substrate is maintained at a deposition temperature, the alkyl halide comprising bromine or iodine, and both the ruthenium precursor and the alkyl halide having a decomposition temperature above the deposition temperature, wherein a ruthenium film is selectively deposited on the second metal surface over the first dielectric surface.
Dependencies are inferred from the claim text.