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US 11,999,877 B2Granted
Silicon nitride chemical mechanical polishing slurry with silicon nitride removal rate enhancers and methods of use thereof
AssigneeFujimi Incorporated
InventorJimmy Granstrom
Life of this patent
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Abstract
The present disclosure relates to relates to silicon nitride (SiN) chemical-mechanical polishing (CMP) compositions with SiN removal rate enhancers. The SiN CMP compositions increase the SiN polishing rate while suppressing the tetratethylorthosilicate (TEOS) polishing rate, thus providing a high SiN/TEOS selectivity ratio and reducing any defects on the surfaces of polished substrates.
Claims15
A polishing composition comprising an abrasive, a SiN removal rate enhancer, a pH adjusting agent, and water, wherein
- the abrasive is anion-modified silica wherein a surface of the anion-modified silica has sulfonic acid groups covalently attached;
- the SiN removal rate enhancer is a substituted 5- or 6-membered heterocycle, wherein the heterocyclic ring comprises at least two nitrogen atoms and the heterocycle is substituted with at least one group selected from —NH2 and —SH;
- and
- the polishing composition has a pH from about 4 to about 6.
1 more element
Dependencies are inferred from the claim text.