US 11,908,895 B2Granted

Electrostatic discharge protection device

AssigneeSamsung Electronics Co., Ltd.

InventorsJongkyu Song, Jaehyun Yoo, Jangkyu Choi, Jin Heo, Changsu Kim, Chanhee Jeon

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Abstract

An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

Claims18

Dependent claims

An electrostatic discharge protection device, comprising:

an emitter region having a first conductivity-type on a semiconductor substrate;
a base region having a second conductivity-type opposite to the first conductivity-type, and surrounding the emitter region on the semiconductor substrate;
a first collector region having the first conductivity-type surrounding the base region on the semiconductor substrate;
a second collector region having the first conductivity-type surrounding the first collector region on the semiconductor substrate;
a second conductivity-type drift region surrounded by the base region, wherein the second conductivity-type drift region is between the emitter region and the semiconductor substrate, and extends toward the semiconductor substrate deeper than the base region;
a second conductivity-type well region between the base region and the semiconductor substrate, and having a junction interface with the second conductivity-type drift region;
and
a plurality of isolation portions between the emitter region and the base region, between the base region and the first collector region, and between the first collector region and the second collector region, respectively, wherein:
the second conductivity-type well region comprises a second conductivity-type deep well having the junction interface and having a first impurity concentration, and a second conductivity-type shallow well surrounding the base region in the second conductivity-type deep well and having a second impurity concentration that is higher than the first impurity concentration;
and
the base region comprises a high doped concentration region and a second conductivity-type body region within the second conductivity-type shallow well.

8 more elements

An electrostatic discharge protection device, comprising:

an emitter region on a semiconductor substrate;
a base region surrounding the emitter region on the semiconductor substrate;
a first collector region surrounding the base region on the semiconductor substrate;
a second collector region surrounding the first collector region on the semiconductor substrate;
a first conductivity-type well region surrounding both the first collector region and the second collector region, and having a first impurity concentration;
a first conductivity-type drift region surrounding the first conductivity-type well region, and having a second impurity concentration that is lower than the first impurity concentration;
a second conductivity-type well region between the base region and the semiconductor substrate, extending toward the semiconductor substrate deeper than the first conductivity-type drift region, and having a junction interface with the first conductivity-type drift region;
and
a plurality of isolation portions between the emitter region and the base region, between the base region and the first collector region, and between the first collector region and the second collector region, respectively,
wherein the second conductivity-type well region comprises a second conductivity-type deep well having the junction interface and having a third impurity concentration, and a second conductivity-type shallow well surrounding the base region in the second conductivity-type deep well, and having a fourth impurity concentration that is higher than the third impurity concentration,
wherein the base region comprises a high concentration doped region, and a second conductivity-type body region connecting the high concentration doped region and the second conductivity-type deep well below the high concentration doped region, the second conductivity-type body region having a fifth impurity concentration lower than the fourth impurity concentration, and
wherein the second conductivity-type body region is within the second conductivity-type shallow well.

9 more elements

An electrostatic discharge protection device, comprising:

an emitter region on a semiconductor substrate;
a base region surrounding the emitter region on the semiconductor substrate;
a first collector region surrounding the base region on the semiconductor substrate;
a second collector region surrounding the first collector region on the semiconductor substrate;
a first conductivity-type drift region surrounding both the first collector region and the second collector region and extending between the first collector region and the second collector region and the semiconductor substrate;
a second conductivity-type drift region surrounding the emitter region and extending between the emitter region and the semiconductor substrate;
a second conductivity-type deep well between the base region and the semiconductor substrate, extending toward the semiconductor substrate deeper than the first conductivity-type drift region and the second conductivity-type drift region, having a first junction interface and a second junction interface with the first conductivity-type drift region and the second conductivity-type drift region, respectively, and having a first impurity concentration;
a second conductivity-type shallow well surrounding the base region in the second conductivity-type deep well and having a second impurity concentration that is higher than the first impurity concentration;
and
a plurality of isolation portions between the emitter region and the base region, between the base region and the first collector region, and between the first collector region and the second collector region, respectively,
wherein the base region comprises a high concentration doped region, and a second conductivity-type body region connecting the high concentration doped region and the second conductivity-type deep well below the high concentration doped region, the second conductivity-type body region having a third impurity concentration, higher than the first impurity concentration and lower than the second impurity concentration, and
wherein the second conductivity-type body region is within the second conductivity-type shallow well.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/542,728Filed 6 Dec 2021
Priority: KR 10-2021-000867921 Jan 2021
Published: US 2022/0231126 A121 Jul 2022
Granted: 20 Feb 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 62/137
Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions: collector…
H10D 89/711
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using bipolar transistors as protective elements
H10D 10/60
Bipolar junction transistors [BJT]: lateral BJTs
H10D
Inorganic electric semiconductor devices

Family

US 2022/0231126 A1Pre-grant publication · published 21 Jul 2022
US 11,908,895 B2This patent

From the US filing history. Foreign family members aren’t listed.

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