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US 11,908,887 B2Granted
Capacitor and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeho Lee, Boeun Park, Younggeun Park, Jooho Lee
Life of this patent
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Abstract
Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
Claims17
A capacitor comprising:
- a first electrode;
- a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric films having different conductances from each other;
- and
- a second electrode on the plurality of dielectric films,
- wherein the plurality of dielectric films are configured such that
- the capacitor has a first capacitance,
- a capacitance across a dielectric film having the smallest conductance, among the plurality of dielectric films, is a second capacitance,
- the smallest conductance is less than or equal to a tenth ( 1/10) a conductance of each of a remainder of the plurality of dielectric films, and
- a difference in capacitance between the first capacitance and the second capacitance is less than a difference in capacitance between the first capacitance and a capacitance of each of the remainder of the plurality of dielectric films.
6 more elements
Dependencies are inferred from the claim text.