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US 11,908,885 B2Granted
Semiconductor device structure with magnetic element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Yu Ku, Chi-Cheng Chen, Hon-Lin Huang, Wei-Li Huang, Chun-Yi Wu, Chen-Shien Chen
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.
Claims20
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- an isolation element over the magnetic element, wherein the magnetic element is wider than the isolation element;
- a conductive line over the isolation element;
- a second isolation element extending across the magnetic element, wherein the second isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element;
- and
- a second conductive line over the second isolation element.
4 more elements
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate, wherein the magnetic element comprises multiple sub-layers, and each sub-layer is wider than another sub-layer above it;
- a conductive feature extending across the magnetic element and partially covering the magnetic element;
- and
- an isolation element between the conductive feature and the magnetic element, wherein opposite edges of the isolation elements are laterally between opposite edges of the magnetic element.
2 more elements
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- an isolation element over the magnetic element;
- a conductive line over the isolation element, wherein the conductive line extends across opposite edges of the magnetic element;
- and
- a dielectric layer over the conductive line, the isolation element, and the magnetic element, wherein the dielectric layer is closer to the magnetic element than the conductive line.
3 more elements
Dependencies are inferred from the claim text.