Semiconductor device including well region

A semiconductor device comprising:

• a substrate comprising first-conductivity-type impurities;
• a first active region and a second active region provided on the substrate;
• a suction region surrounding the first active region and the second active region, the suction region comprising the first-conductivity-type impurities;
• and
• a well region provided in the substrate between the first active region and the second active region, the well region comprising second-conductivity-type impurities different from the first-conductivity-type impurities,
• wherein the well region is spaced apart from a top surface of the substrate and the suction region, and
• wherein a minimum distance between the well region and the top surface of the substrate is smaller than a width of the suction region along a first direction parallel to the top surface of the substrate.

A semiconductor device comprising:

• a substrate comprising first-conductivity-type impurities;
• an active region provided on the substrate;
• a suction region surrounding the active region and comprising the first-conductivity-type impurities;
• and
• a guard structure connected to the suction region,
• wherein the guard structure comprises first guard vias and second guard vias provided on the suction region, and a first guard line provided on the first guard vias and the second guard vias, and
• wherein an outer longer side wall of one of the first guard vias faces inner longer side walls of two of the second guard vias.