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AssigneeYoung Chang Chemical Co., Ltd
InventorsSu Jin Lee, Young Cheol Choi, Seung Hun Lee, Seung Hyun Lee
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Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.
A chemically amplified positive photoresist composition for improving a pattern profile, suitable for use in a photoresist enabling exposure using a light source having a wavelength of 248 nm, comprising, based on a total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive consisting of Chemical Formula 1 below, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and a remainder of a solvent:
Dependencies are inferred from the claim text.