Processing method for fluorination of fluorination-target component for semiconductor fabrication equipment, which minimizes generation of contaminant particles, and fluorinated component obtained thereby

A processing method for fluorinating a fluorination-target component, coated with Y2O3 or YAG to have plasma resistance, in a semiconductor dry etching equipment, the method comprising:

• a first step of placing the fluorination-target component in a processing chamber having a plasma reaction space;
• a second step of introducing a mixed gas into the processing chamber, the mixed gas being composed of a discharge gas selected from among He, Ne, Ar, Kr, and Xe, a fluorine-free reactive gas selected from among O2, N2, and air, and a fluorine-containing reactive gas selected from among fluorocarbons, including CF4, C2F6, and C4F8, and nitrogen trifluoride (NF3);
• a third step of supplying the mixed gas, introduced into the processing chamber, into the plasma reaction space;
• and
• a fourth step of generating plasma in the plasma reaction space by applying high-frequency power to the processing chamber, and fluorinating the fluorination-target component by the generated plasma and fluorine-containing radical gas such that a fluoride coating layer is formed on a surface of the fluorination-target component, the fluoride coating layer including yttrium oxyfluoride (YOF) forming a surface layer of the fluoride coating layer,
• wherein the high-frequency power in the fourth step is 300 to 400 W at a frequency of 1 to 100 MHz, and
• wherein a content of a fluorine (F) component in the yttrium oxyfluoride (YOF) forming the surface layer of the fluoride coating layer is 1 to 10 at. % (atomic percentage).