Chemical-mechanical polishing solution
AssigneeAnji Microelectronics (Shanghai) Co., Ltd.
InventorWenting Zhou
Life of this patent
Estimating the term…
Abstract
The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.
Claims9
A chemical mechanical polishing slurry, characterized in that the chemical-mechanical polishing slurry consists of silica abrasive particles, first and second accelerating agents, and water;
- wherein the first accelerating agent is a carboxyl-group-containing compound selected from a pyridine compound, a piperidine compound, a pyrrolidine compound, a pyrrole compound, and derivatives thereof, and wherein each of the carboxyl-group-containing compounds includes one or more carboxyl groups;
- wherein the second accelerating agent is a pyrimidine compound containing one or more amino groups, and
- wherein pH value of the chemical mechanical polishing slurry is 2-6.
Dependencies are inferred from the claim text.