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US 11,888,018 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung-Muk Kim
Life of this patent
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Abstract
A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.
Claims9
A capacitor comprising:
- a plurality of lower bottom electrodes;
- a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings;
- upper bottom electrodes formed on the lower bottom electrodes, respectively;
- and
- an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings,
- wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.
3 more elements
Dependencies are inferred from the claim text.