Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Hwal Pyo Kim, Seung Woo Han
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a stack structure including insulating layers and conductive layers, which are alternately stacked; a channel structure penetrating the stack structure; data storage patterns respectively interposed between the conductive layers and the channel structure; blocking patterns respectively interposed between the conductive layers and the data storage patterns; insulating patterns respectively interposed between the insulating layers and the channel structure; and insulative liners interposed between the insulating layers and the insulating patterns, the insulative liners respectively surrounding the insulating patterns.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack structure including first sacrificial layers and insulating layers, which are alternately stacked;
- forming a first opening penetrating the stack structure;
- forming second openings by etching the insulating layers;
- forming protective patterns on the first sacrificial layers;
- forming a data storage layer in the first opening and the second openings;
- forming insulating patterns in the second openings;
- forming a channel structure in the first opening;
- forming third openings exposing the protective patterns by selectively removing the first sacrificial layers;
- removing the protective patterns to partially expose the data storage layer;
- etching the insulating layers through the third openings;
- and
- forming insulative liners respectively surrounding the insulating patterns by partially oxidizing the data storage layer through the third openings.
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack structure including first sacrificial layers and insulating layers, which are alternately stacked;
- forming a first opening penetrating the stack structure;
- forming second openings by etching the insulating layers;
- forming a protective layer in the first opening and the second openings;
- forming second sacrificial patterns in the second openings;
- forming blocking patterns on the first sacrificial layers by oxidizing the protective layer exposed by the second sacrificial patterns;
- forming a data storage layer in the first opening and the second openings;
- forming insulating patterns in the second openings;
- forming a channel structure in the first opening;
- forming third openings by selectively removing the first sacrificial layers;
- etching the insulating layers to partially expose the data storage layer through the third openings;
- and
- forming insulative liners respectively surrounding the insulating patterns by partially oxidizing the data storage layer through the third openings.
Dependencies are inferred from the claim text.