Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) forming a film formation suppression layer on a surface of a first material of a concave portion of a substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element different from the first element;
• and
• (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material,
• wherein a hydroxyl group termination is formed on the surface of the first material before performing (a).

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a precursor supply system configured to supply a precursor into the process chamber;
• a film-forming material supply system configured to supply a film-forming material into the process chamber;
• and
• a controller configured to be capable of controlling the precursor supply system and the film-forming material supply system so as to perform a process in the process chamber, the process including:
• (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying the precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element different from the first element;
• and
• (b) growing a film on a surface of the second material of the concave portion by supplying the film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material,
• wherein a hydroxyl group termination is formed on the surface of the first material before performing (a).

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• (a) forming a film formation suppression layer on a surface of a first material of a concave portion of a substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element different from the first element;
• and
• (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material,
• wherein a hydroxyl group termination is formed on the surface of the first material before performing (a).