Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor well

An integrated circuit (IC) structure, comprising:

• a first doped well in a semiconductor substrate, and having a first doping type;
• a base region within the first doped well, and having the first doping type;
• a second doped well having a first end adjacent the first doped well, and a second end opposite the first end, the second doped well having a second doping type opposite the first doping type;
• a first insulator within the first doped well, horizontally between the base region and the second doped well;
• a third doped well adjacent the second end of the second doped well, the third doped well having the first doping type;
• an emitter region within the third doped well, the emitter region having the second doping type;
• a second insulator within the third doped well, horizontally between the emitter region and the second doped well;
• a collector region within the third doped well and having the second doping type;
• a third insulator within the third doped well, horizontally between the emitter region and the collector region;
• an insulative material within the third doped well, the insulative material having a first end horizontally adjacent the collector region and a second end opposite the first end;
• and
• a doped semiconductor region within the third doped well adjacent the second end of the insulative e material, wherein the doped semiconductor region is of the first doping type, such that an avalanche junction is defined between the collector region and the doped semiconductor region across the doped well.