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US 11,442,356 B2Granted
Lithography mask with an amorphous capping layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Chang Lee, Pei-Cheng Hsu, Chih-Tao Chien, Ming-Wei Chen, Ta-Cheng Lien
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Abstract
A multi-layer reflective structure is disposed over the substrate. An amorphous capping layer is disposed over the multi-layer reflective structure. The amorphous capping layer may contain ruthenium, oxygen, niobium, nitrogen, tantalum, or zirconium. An amorphous layer may also be disposed between the multi-layer reflective structure and the amorphous capping layer. The amorphous layer includes amorphous silicon, amorphous silicon oxide, or amorphous silicon nitride.
Claims20
An apparatus, comprising:
- a substrate;
- a multi-layer reflective structure disposed over the substrate;
- and
- an amorphous capping layer disposed over the multi-layer reflective structure.
1 more element
A method, comprising:
- forming a multi-layer reflective structure over a substrate;
- depositing or growing an amorphous layer over the multi-layer reflective structure;
- and
- depositing or growing a capping layer over the amorphous layer.
1 more element
A method, comprising:
- forming a multi-layer reflective structure over a substrate;
- treating the multi-layer reflective structure with plasma;
- and
- after the treating, forming an amorphous capping layer over the multi-layer reflective structure.
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Dependencies are inferred from the claim text.