Method of controlling substrate processing apparatus, and substrate processing apparatus

A method of controlling a substrate processing apparatus that includes:

• a stage provided inside a main body container and configured to mount a substrate thereon;
• an annular member configured to press the substrate mounted on the stage;
• a gas introduction mechanism configured to introduce a processing gas into the main body container;
• an exhaust part configured to exhaust an interior of the main body container;
• and a heat transfer gas supply/exhaust part configured to supply or exhaust a heat transfer gas to or from a rear surface-side space which is a space between a rear surface of the substrate and a front surface of the stage, through a pipe having one end in communication with the rear surface-side space and the other end connected to a junction node in the heat transfer gas supply/exhaust part, the method comprising:
• mounting the substrate on the stage, and mounting the annular member on the substrate to press the substrate;
• setting a pressure at the junction node in the heat transfer gas supply/exhaust part to a predetermined pressure;
• after the setting the pressure, supplying the heat transfer gas into the rear surface-side space from the heat transfer gas supply/exhaust part through the pipe and a supply path connected to the junction node;
• processing the substrate by introducing the processing gas from the gas introduction mechanism into the main body container;
• after the processing the substrate, exhausting the heat transfer gas from the rear surface-side space, including:
• a first exhaust process of exhausting the heat transfer gas from the rear surface-side space through the pipe and a first exhaust path, which is connected to the junction node and includes an orifice;
• and
• after the first exhaust process, a second exhaust process of exhausting the heat transfer gas from the rear surface-side space through the pipe, the first exhaust path, and a second exhaust path connected to the junction node and bypassing the orifice;
• and
• removing the annular member from the substrate,
• wherein the second exhaust path includes an on-off valve, and the second exhaust process includes controlling opening the on-off valve in an intermittent manner.