Memory structures and methods of forming memory structures

A method of forming a memory structure, the method comprising:

• providing a substrate;
• forming a first well region, a second well region and a third well region within the substrate, wherein the first well region and the third well region have a first conductivity type, and the second well region has a second conductivity type different from the first conductivity type, and wherein the second well region is arranged laterally between the first well region and the third well region, wherein the first well region, the second well region, and the third well region are arranged laterally adjacent to one another in a first direction;
• forming a first gate structure over the second well region, wherein the first gate structure extends over the third well region;
• forming a second gate structure over the second well region, wherein the second gate structure extends over the first well region, wherein the first gate structure and the second gate structure are arranged laterally adjacent to each other over the second well region in a second direction substantially perpendicular to the first direction;
• and
• forming a first conductive region, a second conductive region, and a third conductive region arranged laterally adjacent to one another in the second direction within the second well region, wherein the second conductive region is arranged between the first conductive region and the third conductive region, and
• wherein the first gate structure is arranged laterally between the first conductive region and the second conductive region and wherein the second gate structure is arranged laterally between the second conductive region and the third conductive region.