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US 11,307,489 B2Granted
EUV photomask and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
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Abstract
A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.
Claims20
A method, comprising:
- providing a substrate;
- depositing a reflective layer over the substrate;
- depositing a capping layer over the reflective layer;
- depositing an absorption layer over the capping layer;
- and
- treating the reflective layer by a laser beam to form a border region, the laser beam comprising a pulse duration of less than about ten picoseconds.
3 more elements
A method of manufacturing a photomask, comprising:
- providing a substrate;
- depositing a multilayer stack comprising Mo/Si layers over the substrate, the multilayer stack comprising a first portion and a second portion circumscribing the first portion;
- depositing a capping layer over the multilayer stack;
- forming an absorption layer over the capping layer;
- and
- performing a treatment on the second portion using a laser beam to form molybdenum silicide in the second portion, the laser beam comprising a beam intensity of less than an ablation energy of the multilayer stack and a pulse duration of less than a nanosecond.
3 more elements
A photomask, comprising:
- a substrate;
- a multilayer stack over the substrate, the multilayer stack comprising alternating molybdenum layers and silicon layers and including a first area and a second area laterally surrounding the first area, the second area comprising a thickness less than a thickness of the first area;
- a cap layer over the multilayer stack;
- and
- an absorption layer over the cap layer.
2 more elements
Dependencies are inferred from the claim text.