Manufacturing method of phase shift mask and phase shift mask

A manufacturing method of a phase shift mask, comprising:

• forming a pattern of metal shielding layer on a base substrate;
• forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer;
• patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer in such a way that an orthographic projection of the pattern of first photoresist layer on the base substrate completely covers an orthographic projection of the pattern of metal shielding layer on the base substrate and an area of the orthographic projection of the pattern of first photoresist layer on the base substrate is larger than an area of the orthographic projection of the pattern of metal shielding layer on the base substrate;
• and
• etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer,
• wherein patterning the first photoresist layer with the pattern of metal shielding layer serving as the mask to form the pattern of first photoresist layer comprises:
• enabling at least a portion of light emitted from an exposure machine located at a side of the base substrate facing away from the pattern of metal shielding layer to be transmitted through the phase shift layer having a light transmitting property, with shielding by the pattern of metal shielding layer, such that the first photoresist layer is exposed to form the pattern of first photoresist layer.