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US 11,029,604 B2Granted
Immersion post-exposure bake lithography process and systems
AssigneeSanDisk Technologies LLC
InventorEisuke Ohtomi
Life of this patent
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Abstract
A method of performing extreme ultraviolet lithography process includes applying a protic solvent over an extreme ultraviolet (EUV) photoresist layer located over a substrate after exposure to EUV radiation, heating the protic solvent on the EUV photoresist layer to a post-exposure bake temperature photoresist, and removing the protic solvent from above the EUV photoresist layer prior to developing the EUV photoresist layer.
Claims17
A method of performing extreme ultraviolet lithography process, comprising:
- applying a protic solvent over an extreme ultraviolet (EUV) photoresist layer located over a substrate after exposure to EUV radiation;
- heating the protic solvent on the EUV photoresist layer to a post-exposure bake temperature while the EUV photoresist layer is immersed in the protic solvent or while the protic solvent is present over the EUV photoresist layer as a puddle;
- and
- removing the protic solvent from above the EUV photoresist layer prior to developing the EUV photoresist layer.
1 more element
Dependencies are inferred from the claim text.