Semiconductor substrate processing method

A semiconductor substrate processing method comprising:

• a peeling layer forming step of forming a peeling layer at a designated depth within a first semiconductor substrate by irradiating the first semiconductor substrate with a laser beam having a wavelength capable of passing through the first semiconductor substrate while positioning a focal point of the laser beam within the first semiconductor substrate;
• a second semiconductor substrate forming step of forming a second semiconductor substrate by epitaxial growth on an upper surface of the first semiconductor substrate after performing the peeling layer forming step thereby forming a two-layer structure semiconductor substrate;
• a peeling step of peeling off the first semiconductor substrate from the peeling layer;
• and
• a grinding step of grinding and removing the first semiconductor substrate from the two-layer structure semiconductor substrate after performing the peeling step.