Method of controlling reticle masking blade positioning to minimize impact on critical dimension uniformity and device for controlling reticle masking blade positioning

A method of manufacturing a semiconductor device using an extreme ultraviolet lithography tool,

• wherein the extreme ultraviolet lithography tool includes:
• an extreme ultraviolet radiation source;
• a stage for supporting a photoresist coated substrate;
• a reflective reticle support stage;
• a pair of reticle masking blades located between the extreme ultraviolet radiation source and the reflective reticle support stage arranged to form a substantially rectangular opening exposing the reticle pattern,
• wherein the pair of reticle masking blades are positioned at a first location within a set tolerance range;
• wherein the method includes:
• selectively exposing a first region of the photoresist coated substrate to extreme ultraviolet radiation reflected off a reflective reticle in the extreme ultraviolet lithography tool;
• monitoring the position of the reticle masking blades during the selectively exposing;
• determining whether the pair of the reticle masking blades are located within the set tolerance range;
• and
• adjusting the position of the pair reticle masking blades if the pair of reticle masking blades is outside the set tolerance range by moving the pair of reticle masking blades in a direction parallel to a main surface of the stage for supporting a photoresist coated substrate or in a direction perpendicular to the main surface of the stage for supporting a photoresist coated substrate to adjust the size of a penumbra of radiation reflected off the reflective reticle.

An extreme ultraviolet lithography tool, comprising:

• an extreme ultraviolet radiation source;
• a semiconductor substrate stage;
• a reticle having a reticle pattern formed thereon;
• a pair of reticle masking blades arranged to form a substantially rectangular opening exposing the reticle pattern located between the semiconductor substrate stage and the reticle;
• actuators configured to move the pair of reticle masking blades in a direction parallel to a main surface of the semiconductor substrate stage and in a direction perpendicular to the main surface of the semiconductor substrate stage if the pair of reticle masking blades are not within a set tolerance range;
• and
• a controller configured to determine whether the pair of reticle masking blades are located within the set tolerance range.