Back to results
US 10,865,475 B2Granted
Deposition of metal borides and silicides
AssigneeASM IP Holding B.V.
InventorsPetri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
Life of this patent
Estimating the term…
Abstract
A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.
Claims21
A method of forming a metal boride or a metal silicide comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal halide precursor deposition onto the substrate, the performing the metal halide precursor deposition step comprises:
- maintaining a metal halide precursor at a first temperature prior to the metal halide entering into the reaction chamber;
- pulsing the metal halide precursor onto the substrate;
- and
- purging an excess of the metal halide precursor from the reaction chamber;
- and
- performing a reducing precursor deposition onto the substrate, the performing the reducing precursor deposition step comprises:
- maintaining a reducing precursor at a second temperature prior to the reducing precursor entering into the reaction chamber;
- pulsing the reducing precursor onto the substrate;
- and
- purging an excess of the reducing precursor from the reaction chamber;
- wherein the metal halide precursor comprises one of:
- niobium tetrabromide (NbBr4), niobium tetraiodide (NbI4), zirconium tetrabromide (ZrBr4), zirconium tetraiodide (ZrI4), molybdenum pentabromide (MoBr5), molybdenum hexabromide (MoBr6), molybdenum pentaiodide (MoI5), or molybdenum hexaiodide (MoI6);
- wherein a reaction between the metal halide precursor and the reducing precursor forms a film of:
- niobium diboride (NbB2), zirconium diboride (ZrB2), molybdenum boride (MoB), niobium silicide (NbSi2), zirconium silicide (ZrSi2), or molybdenum disilicide (MoSi2);
- wherein a pressure of the reaction chamber ranges between 0.5 and 8 Torr;
- wherein the first temperature is different than the second temperature;
- wherein the metal precursor deposition step is repeated a predetermined number of times;
- and
- wherein the reducing precursor deposition step is repeated a predetermined number of times.
18 more elements
A method of forming a metal boride or a metal silicide for NMOS applications comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal halide precursor deposition onto the substrate, the performing the metal halide precursor deposition step comprises:
- maintaining a metal halide precursor at a first temperature prior to the metal halide entering into the reaction chamber;
- pulsing the metal halide precursor onto the substrate;
- and
- purging an excess of the metal halide precursor from the reaction chamber;
- and
- performing a reducing precursor deposition onto the substrate, the performing the reducing precursor deposition step comprises:
- maintaining a reducing precursor at a second temperature prior to the reducing precursor entering into the reaction chamber;
- pulsing the reducing precursor onto the substrate;
- and
- purging an excess of the reducing precursor from the reaction chamber;
- wherein a temperature of the reaction chamber ranges between 200° C. and 400° C.;
- wherein the first temperature is different than the second temperature;
- wherein the metal halide precursor comprises one of:
- niobium tetrabromide (NbBr4), niobium tetraiodide (NbI4), zirconium tetrabromide (ZrBr4), zirconium tetraiodide (ZrI4), molybdenum pentabromide (MoBr5), molybdenum hexabromide (MoBr6), molybdenum pentaiodide (MoI5), or molybdenum hexaiodide (MoI6);
- and
- wherein a reaction between the metal halide precursor and the reducing precursor forms a film of:
- niobium diboride (NbB2), zirconium diboride (ZrB2), molybdenum boride (MoB), niobium silicide (NbSi2), zirconium silicide (ZrSi2), or molybdenum disilicide (MoSi2).
16 more elements
Dependencies are inferred from the claim text.