Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyooho Jung, Sangyeol Kang, Kyuho Cho, Eunsun Kim, Hyosik Mun
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Abstract
A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.
Claims19
A method of manufacturing a semiconductor device, the method comprising:
- forming a first electrode;
- forming a preliminary dielectric layer on the first electrode;
- forming a second electrode on the preliminary dielectric layer;
- and
- at least partially phase-changing the preliminary dielectric layer to form a dielectric layer, an interfacial energy between the first electrode and the dielectric layer being less than an interfacial energy between the first electrode and the preliminary dielectric layer.
A semiconductor device, comprising:
- a first electrode;
- a second electrode on the first electrode;
- and
- a dielectric layer between the first electrode and the second electrode, the dielectric layer including a first portion adjacent to the first electrode, and a second portion adjacent to the second electrode, the first portion and the second portion having different crystalline phases from each other, wherein an interfacial energy between the first electrode and the first portion of the dielectric layer is less than an interfacial energy between the second electrode and the second portion of the dielectric layer.
Dependencies are inferred from the claim text.