US 10,504,731 B2 · TFT substrate and manufacturing method thereof

Abstract

The present invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate according to the present invention includes additionally providing a transparent polypropylene film on an IGZO active layer to provide an effect of blocking UV light and thus preventing UV light from affecting stability of the IGZO active layer so as to improve stability of a TFT device without increasing the number of masks used. When the manufacturing method of the TFT substrate according to the present invention is applied to production of OLED display panels, the transparent polypropylene film may serve as a planarization layer so that the existing manufacturing process of OLED display panels does not need to be modified and manufacturing costs are not increased. Further, the TFT substrate so manufactured adopts a back channel etching type IGZO-TFT structure, which, as compared to a traditional etch stop type IGZO-TFT structure, requires fewer photoengraving operations and a lower manufacturing cost. The TFT substrate according to the present invention includes a transparent polypropylene film additionally provided on an IGZO active layer to provide an effect of blocking UV light so as to improve stability of a TFT device and manufacturing cost is low.

Claims13

Dependent claims

A manufacturing method of a thin-film transistor (TFT) substrate, comprising the following steps:

Step 1:
providing a backing plate, forming a gate electrode on the backing plate, and forming a gate insulation layer on the gate electrode and the backing plate;
Step 2:
forming an active layer on the gate insulation layer to be located above and corresponding to the gate electrode and forming a source electrode and a drain electrode on the active layer and the gate insulation layer such that the source electrode and the drain electrode are respectively in contact with two opposite ends of the active layer;
and
Step 3:
forming a passivation layer on the source electrode, the drain electrode, the active layer, and the gate insulation layer, and forming a transparent polypropylene film on the passivation layer,
wherein the passivation layer is directly deposited on and in contact with tops of the source electrode, the drain electrode, and the active layer, and the transparent polypropylene film is directly coated on a top surface of the passivation layer such that a bottom surface of the transparent polypropylene film is in direct contact with the top surface of the passivation layer and an opposite, top surface of the transparently polypropylene film forms a flat planar surface that is opposite to the active layer.

5 more elements

A thin-film transistor (TFT) substrate, comprising:

a backing plate, a gate electrode arranged on the backing plate, a gate insulation layer arranged on the gate electrode and the backing plate, an active layer arranged on the gate insulation layer and located above and corresponding to the gate electrode, a source electrode and a drain electrode arranged on the active layer and the gate insulation layer and respectively in contact with two opposite ends of the active layer, a passivation layer arranged on the source electrode, the drain electrode, the active layer, and the gate insulation layer, and a transparent polypropylene film arranged on the passivation layer,
wherein the passivation layer is directly located on and in contact with tops of the source electrode, the drain electrode, and the active layer, and the transparent polypropylene film is directly located on a top surface of the passivation layer such that a bottom surface of the transparent polypropylene film is in direct contact with the top surface of the passivation layer and an opposite, top surface of the transparently polypropylene film forms a flat planar surface that is opposite to the active layer.

A thin-film transistor (TFT) substrate, comprising:

a backing plate, a gate electrode arranged on the backing plate, a gate insulation layer arranged on the gate electrode and the backing plate, an active layer arranged on the gate insulation layer and located above and corresponding to the gate electrode, a source electrode and a drain electrode arranged on the active layer and the gate insulation layer and respectively in contact with two opposite ends of the active layer, a passivation layer arranged on the source electrode, the drain electrode, the active layer, and the gate insulation layer, and a transparent polypropylene film arranged on the passivation layer,
wherein the passivation layer is directly located on and in contact with tops of the source electrode, the drain electrode, and the active layer, and the transparent polypropylene film is directly located on a top surface of the passivation layer such that a bottom surface of the transparent polypropylene film is in direct contact with the top surface of the passivation layer and an opposite, top surface of the transparently polypropylene film forms a flat planar surface that is opposite to the active layer;
wherein the active layer comprises a material of indium gallium zinc oxide;
and
wherein the backing plate comprises a glass substrate;
the gate electrode, the source electrode, and the drain electrode each comprise a material comprising one or multiple ones of molybdenum, aluminum, copper, titanium, and chromium;
the gate insulation layer and the passivation layer each comprise a material comprising one or multiple ones of silicon oxide and silicon nitride.

4 more elements

Dependencies are inferred from the claim text.

TFT substrate and manufacturing method thereof

Life of this patent

TFT substrate and manufacturing method thereof

Life of this patent

Abstract

Claims13