Mask blank, phase shift mask, and method for manufacturing semiconductor device

A phase shift mask having a structure in which a phase shift film having a transfer pattern formed therein and a light shielding film having a light shielding pattern formed therein are laminated in this order on a transparent substrate,

• wherein the phase shift film has a function to transmit exposure light of an ArF excimer laser at a transmittance of not less than 2% and not more than 30%, and a function to generate a phase difference of not less than 150 degrees and not more than 200 degrees between the exposure light transmitted through the phase shift film and the exposure light transmitted through air for the same distance as a thickness of the phase shift film,
• wherein the phase shift film is formed from a material containing silicon and not substantially containing chromium, and includes a structure in which a lower layer and an upper layer are laminated from the transparent substrate side,
• wherein the lower layer has a refractive index n lower than the transparent substrate at a wavelength of the exposure light,
• wherein the upper layer has a refractive index n higher than the transparent substrate at a wavelength of the exposure light,
• wherein the lower layer has an extinction coefficient k higher than the upper layer at a wavelength of the exposure light,
• wherein the light shielding film includes a layer in contact with the phase shift film, and
• wherein the layer in contact with the phase shift film is formed from a material containing chromium, has a refractive index n lower than the upper layer at a wavelength of the exposure light, and has an extinction coefficient k higher than the upper layer at a wavelength of the exposure light.