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US 10,373,909 B2Granted
Selective surface modification of interconnect structures
AssigneeInternational Business Machines Corporation
InventorsRaghuveer R. Patlolla, Cornelius Brown Peethala, Roger A. Quon, Chih-Chao Yang
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Abstract
Semiconductor structures including copper interconnect structures and methods include selective surface modification of copper by providing a CuxTiyNz alloy in the surface. The methods generally include forming a titanium nitride layer on an exposed copper surface followed by annealing to form the CuxTiyNz, alloy in the exposed copper surface. Subsequently, the titanium layer is removed by a selective wet etching.
Claims13
A semiconductor structure comprising:
- at least one copper interconnect structure filled with copper in an interlayer dielectric, the at least one copper interconnect structure comprising a CuxTiyNz alloy in a top surface of the copper, wherein 0<x<1, 0<y<1, and 0≤z<1, wherein the CuxTiyNz alloy in the top surface is free of TiN thereon.
Dependencies are inferred from the claim text.