Methods of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorJaewoo Kim
Life of this patent
Estimating the term…
Abstract
Methods of fabricating a semiconductor device are provided. The methods may include forming a hard mask film on a lower film and forming first spacers on the hard mask film. The first spacers may define an exposure region of the hard mask film, and the exposure region may include a patterning portion and a non-patterning portion. The methods may also include forming a mold film on the first spacers and forming a blocking pattern in the mold film. The blocking pattern may vertically overlap the non-patterning portion. The methods may further include exposing the first spacers by removing the mold film after forming the blocking pattern.
Claims10
A method of fabricating a semiconductor device, the method comprising:
- forming a hard mask film on a lower film;
- forming a mask pattern on the hard mask film;
- forming spacers on sidewalls of the mask pattern, the spacers defining an exposure region of the hard mask film and the exposure region including a patterning portion and a non-patterning portion;
- forming a first mold film comprising a flat upper surface on the hard mask film;
- forming a photoresist pattern on the first mold film, the photoresist pattern including an opening vertically overlapping the non-patterning portion of the hard mask film;
- forming a hole in the first mold film using the photoresist pattern as a mask;
- forming a first blocking pattern filling the hole in the first mold film;
- after forming the first blocking pattern, exposing the spacers by removing the first mold film;
- after exposing the spacers, forming a hard mask pattern on the lower film by etching the patterning portion of the hard mask film;
- forming a trench in the lower film using the hard mask pattern as a mask;
- and
- forming a conductive pattern in the lower film by filling the trench with a conductive material.
A method of fabricating a semiconductor device, the method comprising:
- forming a mask pattern on a hard mask film;
- forming spacers along a sidewall of the mask pattern, the spacers defining an exposure region of the hard mask film and the exposure region including a patterning portion and a non-patterning portion;
- removing the mask pattern;
- forming a mold film on the hard mask film after removing the mask pattern, the mold film extending on the spacers;
- forming a photoresist pattern on the mold film, the photoresist pattern including an opening vertically overlapping the non-patterning portion of the hard mask film and the photoresist pattern vertically overlapping the patterning portion of the hard mask film;
- forming a hole in the mold film using the photoresist pattern;
- forming a blocking pattern filling the hole;
- and
- forming a hard mask pattern by etching the hard mask film using the blocking pattern and the spacers as an etching mask.
Dependencies are inferred from the claim text.