Lithographic technique incorporating varied pattern materials

A method comprising:

• forming first fins, second fins, and third fins over a material layer, wherein the second fins are disposed along sidewalls of the first fins and the third fins are disposed along sidewalls of the second fins;
• forming a first patterning layer over the first fins, the second fins, and the third fins;
• patterning the first patterning layer to expose a portion of the first fins;
• performing a first etching process configured to etch the exposed portion of the first fins and the material layer underlying the exposed portion of the first fins and further configured to avoid substantial etching of the second fins and the third fins;
• forming a second patterning layer over the first fins, the second fins, and the third fins;
• patterning the second patterning layer to expose a portion of the third fins;
• performing a second etching process configured to etch the exposed portion of the third fins and the material layer underlying the exposed portion of the third fins and further configured to avoid substantial etching of the first fins and the second fins;
• depositing a fill material in at least one recess formed in the material layer by the first etching process and the second etching process;
• and
• removing remaining first fins, second fins, and third fins.

A method comprising:

• forming a fin patterning layer that includes a first spacer material, a second spacer material, and a third spacer material over a material layer of a workpiece, wherein the first spacer material defines a first set of fins and the third spacer material defines a second set of fins, wherein the second spacer material separates each fin of the first set of fins from each fin of the second set of fins, and wherein the first spacer material, the second spacer material, and the third spacer material are different materials;
• performing a first fin-cut process that includes:
• forming a first patterned resist layer over the fin patterning layer, wherein the first patterned resist layer exposes a first subset of the first set of fins, a first subset of the second set of fins, and a first subset of the second spacer material,
• selectively etching the first subset of the first set of fins to expose a first portion of the material layer, and
• selectively etching the exposed first portion of the material layer, thereby forming a first recess in the material layer;
• performing a second fin-cut process that includes:
• forming a second patterned resist layer over the fin patterning layer, wherein the second patterned resist layer exposes a second subset of the first set of fins, a second subset of the second set of fins, and a second subset of the second spacer material,
• selectively etching the second subset of the second set of fins to expose a second portion of the material layer, and
• selectively etching the exposed second portion of the material layer, thereby forming a second recess in the material layer;
• depositing a fill material in the first recess and the second recess;
• and
• removing the fin patterning layer and the material layer.