Y10S 29/002
Method or apparatus using aluminum
Y10S29/002 (Method or apparatus using aluminum) appears on 7 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 7
- Published applications
- 0
- Assignees
- 4
- Inventors
- 18
- Latest grant
- 8 May 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies8 May 2001US 6,228,186 B1APPLIED Materials.Inc.
- Surface quality enhancement of aerospace skin sheet23 Jan 2001US 6,177,206 B1Alcoa Inc.
- Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target9 Jan 2001US 6,171,455 B2APPLIED Materials.Inc.
- Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target3 Oct 2000US 6,126,791 AAPPLIED Materials.Inc.
- Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target14 Dec 1999US 6,001,227 AAPPLIED Materials.Inc.
No published applications in this class yet.
Most cited
By later US patents
- Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target20US 6,001,227 AAPPLIED Materials.Inc. · 1999
- Aluminum alloy and process for producing the same17US 5,632,827 AKabushiki Kaisha Toyota Chuo Kenkyusho · 1997
- Process for producing split type mechanical part11US 5,878,323 AHonda Giken Kogyo Kabushiki Kaisha · 1999
- Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies11US 6,228,186 B1APPLIED Materials.Inc. · 2001
- Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target6US 6,126,791 AAPPLIED Materials.Inc. · 2000