Electron beam resist composition
AssigneeThe University of Manchester
InventorsScott Lewis, Richard Winpenny, Stephen Yeates
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Abstract
The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
Claims56
An antiscattering anti-scattering resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the antiscattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC), wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species, wherein the primary metal complex is a polymetallic cage or polymetallic ring.
An anti-scattering resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the anti-scattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC), wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species;
- wherein the anti-scattering compound has a density less than or equal to 1.5 g/cm3 and a molecular weight greater than or equal to 2000 g/mol.
An anti-scattering resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the anti-scattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC), wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species;
- wherein the primary metal complex comprises a mixture of ligands.
An anti-scattering resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the anti-scattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC), wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species;
- wherein the primary metal complex comprises a bifunctional ligand comprising co-ordinating atom(s) capable of forming an internal dative bond(s) with metal species within the primary metal complex, and one or more additional co-ordinating atoms capable of forming external dative bonds.
An anti-scattering resist composition for fabricating an integrated circuit die or an integrated circuit wafer, the composition comprising an anti-scattering compound, wherein the anti-scattering compound is a polymetallic metal-organic complex comprising a primary metal complex (PMC), wherein the primary metal complex comprises one or more metal species, and wherein the one or more metal species exclude boron and/or silicon species;
- wherein the composition further comprises a resist polymer.
Dependencies are inferred from the claim text.