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US RE49,209 E1Granted
Method of manufacturing image sensor for reducing crosstalk characteristic
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Chak Ahn, Bum-Suk Kim
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Abstract
An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.
Claims38
A method of manufacturing an image sensor, comprising:
- providing a semiconductor substrate, the semiconductor substrate including a semiconductor material;
- forming a photoelectric detector layer on the semiconductor substrate by implanting impurities through a surface of the semiconductor substrate;
- forming at least one trench in the photoelectric detector layer to a predetermined depth;
- filling the at least one trench with an insulating material to form at least one isolation region, such that the at least one isolation region includes a high-k material, and top surfaces of the at least one isolation region and the photoelectric detector layer are level with each other;
- forming at least one of an anti-reflection layer and a caption layer on the top surfaces of the at least one isolation region and the photoelectric detector layer, such that the anti-reflection layer includes multiple layers in which materials having different refractive indexes are stacked;
- forming a color filter layer on the photoelectric detector layer and the at least one isolation region at least one of the anti-reflection layer and the caption layer, the color filter layer including a white filter and at least one of a red filter, a green filter, or a blue filter;
- and
- forming microlenses on the color filter layer,
- wherein the semiconductor substrate and the color filter layer are on opposite sides of the photoelectric detector layer, a wiring unit within the semiconductor substrate being connected to the photoelectric detector layer,
- wherein the color filter layer includes a plurality of four by four (4×4) color filter arrays, and
- wherein in each of the plurality of 4×4 color filter arrays, a ratio of the red filter or the blue filter to the white filter is 1:2.
8 more elements
An image sensor comprising:
- a pixel array including a plurality of unit pixels,
- wherein each of the plurality of unit pixels includes:
- a plurality of photoelectric detectors including a first photoelectric detector and a second photoelectric detector;
- a plurality of isolation regions including a first isolation region that is disposed between the first photoelectric detector and the second photoelectric detector, top surfaces of the first isolation region and the first and second photoelectric detectors being level with each other;
- an anti-reflection layer disposed on the top surfaces of the first isolation region and the first and second photoelectric detectors, and including a first layer and a second layer disposed on the first layer;
- a plurality of color filters disposed on the anti-reflection layer;
- and
- a plurality of microlenses disposed on the plurality of color filters,
- wherein the anti-reflection layer includes multiple layers in which materials having different refractive indexes are stacked,
- wherein the plurality of color filters include a white filter, the plurality of color filters further include at least one of a red filter, a green filter and a blue filter,
- wherein the first isolation region includes a high-k material, and
- wherein the plurality of color filters include a plurality of four by four (4×4) color filter arrays, in each of the plurality of 4×4 color filter arrays, a ratio of the red filter or the blue filter to the white filter is 1:2.
9 more elements
An image sensor comprising:
- a pixel array including a plurality of unit pixels;
- a row driver configured to provide a row control signal to the pixel array;
- a correlated double sampler configured to receive a first signal from the pixel array and perform a sampling operation on the first signal;
- a ramp generator configured to provide a reference voltage to the correlated double sampler;
- and
- a timing controller configured to provide a control signal to the row driver and/or the correlated double sampler,
- wherein each of the plurality of unit pixels includes:
- a plurality of photoelectric detectors including a first photoelectric detector and a second photoelectric detector;
- a plurality of isolation regions including a first isolation region that is disposed between the first photoelectric detector and the second photoelectric detector, top surfaces of the first isolation region and the first and second photoelectric detectors being level with each other;
- an anti-reflection layer disposed on the top surfaces of the first isolation region and the first and second photoelectric detectors, and including a first layer and a second layer disposed on the first layer, at least one of the first layer and the second layer including oxide;
- a plurality of filters disposed on the anti-reflection layer and including at least one of a white filter, a yellow filter and a transparent filter, the plurality of filters further including at least one of a red filter, a green filter and a blue filter;
- and
- a plurality of microlenses disposed on the plurality of filters,
- wherein the plurality of color filters include a plurality of four by four (4×4) color filter arrays, in each of the plurality of 4×4 color filter arrays, a ratio of the red filter or the blue filter to the white filter is 1:2, and
- wherein the anti-reflection layer includes multiple layers in which materials having different refractive indexes are stacked.
12 more elements
An image sensor comprising:
- a pixel array including:
- a plurality of photoelectric detectors including a first photoelectric detector and a second photoelectric detector;
- a plurality of isolation regions including a first isolation region that is disposed between the first photoelectric detector and the second photoelectric detector, top surfaces of the first isolation region and the first and second photoelectric detectors being level with each other;
- an anti-reflection layer disposed on the top surfaces of the first isolation region and the first and second photoelectric detectors, and including a first layer and a second layer disposed on the first layer;
- a plurality of color filters disposed on the anti-reflection layer;
- and
- a plurality of microlenses disposed on the plurality of color filters,
- wherein the anti-reflection layer includes multiple layers in which materials having different refractive indexes are stacked,
- wherein the plurality of color filters include a yellow filter, the plurality of color filters further include at least one of a red filter, a green filter and a blue filter,
- wherein the first isolation region includes a high-k material,
- wherein at least one of the first layer and the second layer includes oxide, and
- wherein the plurality of color filters include a plurality of four by four (4×4) color filter arrays, in each of the plurality of 4×4 color filter arrays, a ratio of the red filter or the blue filter to the yellow filter is 1:2.
9 more elements
Dependencies are inferred from the claim text.