Package on package devices and methods of packaging semiconductor dies
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chien-Hsun Lee, Yung Ching Chen
Life of this patent
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Abstract
Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal stud bumps are disposed between the first packaged die and the second packaged die. The metal stud bumps include a bump region and a tail region coupled to the bump region. The metal stud bumps are embedded in solder joints.
Claims40
A package-on-package (PoP) device, comprising:
- a first packaged die comprising a first die;
- a second packaged die comprising a second die coupled to the first packaged die;
- and
- a plurality of metal stud bumps disposed between the first packaged die and the second packaged die, wherein the plurality of metal stud bumps is disposed laterally adjacent to the first die of the first packaged die, and wherein the plurality of metal stud bumps each include a bump region proximal the first package die and a tail region extending from the bump region towards the second packaged die, and wherein each of the plurality of metal stud bumps is embedded in a solder joint disposed between a surface of the tail region facing the first packaged die and the second packaged die die;
- and
- a dielectric material located between one of the plurality of metal stud bumps and the first die, the dielectric material having a first height less than a second height of external connections located in physical contact with the first die, the external connections being located on an opposite side of the first die from the second die.
A package-on-package (PoP) device, comprising:
- a bottom packaged die comprising a first die and a peripheral region surrounding the first die, the bottom packaged die further comprising a plurality of metal stud bumps disposed in the peripheral region on a top surface thereof, the plurality of metal stud bumps disposed next to the first die, each of the plurality of metal stud bumps including a bump region and a tail region coupled to the bump region, the tail region having a diameter smaller than the bump region region, wherein the bottom packaged die comprises a through substrate via, the through substrate via comprising a straight sidewall that extends from a first side of a substrate to a second side of the substrate;
- and
- a top packaged die coupled to the bottom packaged die, the top packaged die comprising a plurality of contacts formed on a bottom surface thereof, wherein each of the plurality of metal stud bumps on the bottom packaged die is embedded in a solder joint coupled to one of the plurality of contacts on the top packaged die die and wherein the solder joint covers a first surface of a respective one of the metal stud bumps, the first surface extending from a top of the metal stud bump to a bottom of the metal stud bump, the solder joint being in physical contact with a first dielectric material of the bottom packaged die and a second dielectric material of the top packaged die.
A method of packaging semiconductor dies, the method comprising:
- coupling a first die to a top surface of a first substrate to form a first packaged die die, wherein after the coupling solder balls located between the first substrate and the first die are both partially embedded within a dielectric material of the first substrate and also extend out of the dielectric material of the first substrate;
- coupling a second die to a top surface of a second substrate to form a second packaged die;
- and
- forming a plurality of metal stud bumps between the first packaged die and the second packaged die, wherein the plurality of metal stud bumps is coupled to the first packaged die at the top surface of the first substrate, the plurality of metal bumps disposed laterally adjacent to the first die, each of the plurality of metal stud bumps including a bump region proximal the first packaged die and a tail region coupled to the bump region, the tail region extending from the bump region towards the second packaged die, wherein each of the plurality of metal stud bumps is embedded in a solder joint disposed between the first packaged die and the second packaged die die, wherein the solder joint is formed on the second packaged die prior to the embedding and wherein the solder joint is in physical contact with the dielectric material of the first substrate.
A package-on-package (PoP) device, comprising:
- a first packaged die comprising a first die;
- a second packaged die comprising a second die coupled to the first packaged die;
- and
- a plurality of metal stud bumps disposed between the first packaged die and the second packaged die, wherein the plurality of metal stud bumps is disposed laterally adjacent to the first die of the first packaged die, and wherein the plurality of metal stud bumps each include a bump region proximal the first package die and a tail region extending from the bump region towards the second packaged die, and wherein each of the plurality of metal stud bumps is in contact with a solder joint disposed between the first packaged die and the second packaged die, the solder joint in physical contact with a first dielectric material of the first packaged die and a second dielectric material of the second packaged die.
A package-on-package (PoP) device, comprising:
- a bottom packaged die comprising a first die and a peripheral region surrounding the first die, the bottom packaged die further comprising a plurality of metal stud bumps disposed in the peripheral region on a top surface thereof, the plurality of metal stud bumps disposed next to the first die, each of the plurality of metal stud bumps including a bump region and a tail region coupled to the bump region, the tail region having a diameter smaller than the bump region;
- and
- a top packaged die coupled to the bottom packaged die, the top packaged die comprising a plurality of contacts formed on a bottom surface thereof, wherein each of the plurality of metal stud bumps on the bottom packaged die is in contact with a solder joint coupled to one of the plurality of contacts on the top packaged die, wherein at least one of the plurality of contacts is connected to a through substrate via which extends with straight sidewalls through a substrate of the top packaged die, wherein the solder joint fully covers a sidewall of at least one of the plurality of metal stud bumps facing the first die and is in physical contact with dielectric portions of both the bottom packaged die and the top packaged die.
A method of packaging semiconductor dies, the method comprising:
- coupling a first die to a top surface of a first substrate to form a first packaged die;
- coupling a second die to a top surface of a second substrate to form a second packaged die;
- forming a plurality of metal stud bumps between the first packaged die and the second packaged die, wherein the plurality of metal stud bumps is coupled to the first packaged die at the top surface of the first substrate, the plurality of metal bumps disposed laterally adjacent to the first die, each of the plurality of metal stud bumps including a bump region proximal the first packaged die and a tail region coupled to the bump region, the tail region extending from the bump region towards the second packaged die;
- forming a solder material on the second package die;
- and
- bonding the solder material to the plurality of metal bumps after the forming the solder material, wherein after the bonding each of the plurality of metal stud bumps is in contact with a solder joint disposed between the first packaged die and the second packaged die, the solder joint in physical contact with a dielectric material of the first substrate, external connections located between the first die and the first substrate extending towards the second die further than the dielectric material.
Dependencies are inferred from the claim text.