Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

A crystal growth method comprising:

• (a) introducing a polycrystalline source material and a seed crystal into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber;
• (b) in the presence of a first sublimation growth pressure in the growth ambient, sublimation growing a single crystal on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with gaseous nitrogen in the growth ambient forming a solid nitride compound, reacts with boron in the growth ambient forming a gaseous boron halide compound, or both;
• and
• (c) following step (b) and in the presence of a second sublimation growth pressure in the growth ambient, sublimation growing the single crystal on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.

A SiC crystal growth method comprising:

• (a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed in a furnace chamber, wherein the crucible disposed in the furnace chamber defines a growth ambient;
• (b) initiating sublimation growth of a SiC single crystal on the SiC single crystal seed in the growth ambient;
• (c) following step (b), substantially removing background impurities of nitrogen and boron from the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient;
• and
• (d) following step (c), introducing vanadium and boron dopants into the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient thereby sublimation growing a PI-type SiC single crystal on the SiC seed crystal, wherein the grown PI-type SiC single crystal is semi-insulating, has a room-temperature resistivity of at least 1010 Ohm-cm, and an activation energy of resistivity in the range between approximately 0.9 and 1.5 eV in the temperature range between room temperature and 400° C.

A SiC crystal growth method comprising:

• (a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed in a furnace chamber, wherein the crucible disposed in the furnace chamber defines a growth ambient;
• (b) initiating sublimation growth of a SiC single crystal on the SiC single crystal seed in the growth ambient;
• (c) following step (b), substantially removing background impurities of nitrogen and boron from the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient;
• and
• (d) following step (c), introducing vanadium and nitrogen dopants into the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient thereby sublimation growing a NU-type SiC single crystal on the SiC seed crystal, wherein the grown NU-type SiC single crystal is semi-insulating, has a room-temperature resistivity of at least 1010 Ohm-cm, and an activation energy of resistivity between approximately 0.78 and 0.82 eV in the temperature range between room temperature and 400° C.

A SiC crystal growth method comprising:

• (a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed in a furnace chamber, wherein the crucible disposed in the furnace chamber defines a growth ambient;
• (b) initiating sublimation growth of a SiC single crystal on the SiC single crystal seed in the growth ambient;
• (c) following step (b), substantially removing background impurities of nitrogen and boron from the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient;
• and
• (d) following step (c), introducing vanadium and boron dopants into the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient thereby sublimation growing a PI-type SiC single crystal on the SiC seed crystal, wherein the grown PI-type SiC single crystal is semi-insulating, has a room-temperature resistivity of at least 1010 Ohm-cm, and an activation energy of resistivity in the range between approximately 0.9 and 1.5 eV in the temperature range between room temperature and 400° C.

A SiC crystal growth method comprising:

• (a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed in a furnace chamber, wherein the crucible disposed in the furnace chamber defines a growth ambient;
• (b) initiating sublimation growth of a SiC single crystal on the SiC single crystal seed in the growth ambient;
• (c) following step (b), substantially removing background impurities of nitrogen and boron from the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient;
• and
• (d) following step (c), introducing vanadium and nitrogen dopants into the growth ambient during sublimation growth of the SiC single crystal on the SiC single crystal seed in the growth ambient thereby sublimation growing a NU-type SiC single crystal on the SiC seed crystal, wherein the grown NU-type SiC single crystal is semi-insulating, has a room-temperature resistivity of at least 1010 Ohm-cm, and an activation energy of resistivity between approximately 0.78 and 0.82 eV in the temperature range between room temperature and 400° C.