Package board having internal terminal interconnection and semiconductor package employing the same

A semiconductor package comprising:

• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• a power ball, a ground ball and a signal ball that are in contact with the second power pad, the second ground pad and the second signal pad, respectively;
• an internal terminal interconnection disposed in a bulk region of the board body or on a surface of the board body to electrically connect the first internal terminal pad to the second internal terminal pad;
• a semiconductor chip mounted on the front surface of the board body, the semiconductor chip having an external power bonding pad, an external ground bonding pad, an external signal bonding pad, a first internal bonding pad and a second internal bonding pad;
• and
• an external power connector, an external ground connector, an external signal connector, a first internal connector and a second internal connector electrically connecting the first power pad, the first ground pad, the first signal pad, the first internal terminal pad and the second internal terminal pad to the external power bonding pad, the external ground bonding pad, the external signal bonding pad, the first internal bonding pad and the second internal bonding pad, respectively,
• wherein the first internal terminal pad and the second internal terminal pad are electrically insulated from the first power pad, the first ground pad and the first signal pad.

A semiconductor package comprising:

• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• a power ball, a ground ball and a signal ball that are in contact with the second power pad, the second ground pad and the second signal pad, respectively;
• an internal terminal interconnection disposed in a bulk region of the board body or on a surface of the board body to electrically connect the first internal terminal pad to the second internal terminal pad;
• a semiconductor chip mounted on the front surface of the board body, the semiconductor chip having an external power bonding pad, an external ground bonding pad, an external signal bonding pad, a first internal bonding pad and a second internal bonding pad;
• and
• an external power connector, an external ground connector, an external signal connector, a first internal connector and a second internal connector electrically connecting the first power pad, the first ground pad, the first signal pad, the first internal terminal pad and the second internal terminal pad to the external power bonding pad, the external ground bonding pad, the external signal bonding pad, the first internal bonding pad and the second internal bonding pad, respectively,
• wherein the semiconductor chip comprises:
• a semiconductor substrate;
• internal circuits formed at the semiconductor substrate;
• an insulating layer covering the internal circuits and the semiconductor substrate;
• an external power chip pad, an external ground chip pad, an external signal chip pad, a first internal chip pad and a second internal chip pad disposed on the insulating layer and electrically connected to the internal circuits;
• a dielectric layer covering the insulating layer and the chip pads;
• and
• a power line, a ground line, a signal line, a first interconnection and a second interconnection redistributed on the dielectric layer and electrically connected to the external power chip pad, the external ground chip pad, the external signal chip pad, the first internal chip pad and the second internal chip pad, respectively,
• wherein a portion of the redistributed power line, a portion of the redistributed ground line, a portion of the redistributed signal line, a portion of the first interconnection and a portion of the second interconnection correspond to the external power bonding pad, the external ground bonding pad, the external signal bonding pad, the first internal bonding pad and the second internal bonding pad, respectively.

A semiconductor package comprising:

• a package board comprising:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, and at least three internal terminal pads disposed on the front surface of the board body, the at least three internal terminal pads being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the at least three internal terminal pads;
• and
• a semiconductor chip mounted on the package board and including an internal power generator and an internal circuit,
• wherein:
• the at least three internal terminal pads are electrically insulated from remaining pads configured to provide a function other than the internal power delivery function, the remaining pads including the first power pad, the first ground pad, the first signal pad, the second power pad, the second ground pad and the second signal pad,
• the internal terminal interconnection is connected to the semiconductor chip through the at least three internal terminal pads,
• one of the at least three internal terminal pads is electrically connected to an output terminal of the internal power generator,
• another of the at least three internal terminal pads is electrically connected to a power terminal of the internal circuit,
• the internal terminal interconnection is not electrically connected with conductive elements disposed on the back surface of the board body,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor package comprising:

• a package board comprising:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, and at least three internal terminal pads disposed on the front surface of the board body, the at least three internal terminal pads that include a first internal terminal pad and a second internal terminal pad being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the first internal terminal pad to the second internal terminal pad;
• and
• a semiconductor chip mounted on the package board and including an internal power generator and an internal circuit,
• wherein:
• the at least three internal terminal pads are electrically insulated from the first power pad, the first ground pad and the first signal pad,
• the internal terminal interconnection is connected to the semiconductor chip through the at least three internal terminal pads,
• the internal terminal interconnection is not electrically connected with conductive elements disposed on the back surface of the board body,
• the at least three internal terminal pads include a first internal terminal pad and a second internal terminal pad,
• the first internal terminal pad is electrically connected to an output terminal of the internal power generator,
• the second internal terminal pad is electrically connected to a power terminal of the internal circuit,
• the internal terminal interconnection does not operate as an inductor,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor device comprising:

• a package board comprising:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, and at least three internal terminal pads disposed on the front surface of the board body;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the at least three internal terminal pads, the at least three internal terminal pads being electrically insulated from the first power pad, the first ground pad and the first signal pad;
• and
• a semiconductor chip mounted on the package board and including an internal power generator and an internal circuit,
• wherein:
• the internal terminal interconnection is connected to the semiconductor chip through the at least three internal terminal pads;
• and
• the internal terminal interconnection is not electrically connected with conductive elements disposed on the back surface of the board body,
• the internal terminal interconnection does not encircle any of the at least three internal terminal pads,
• a power terminal of the internal circuit is electrically connected to one of the at least three internal terminal pads,
• the internal power generator is electrically connected to another of the at least three internal terminal pads,
• the internal power generator outputs an internal power voltage through an output terminal which is applied to the internal circuit,
• the internal terminal interconnection does not have a spiral geometry,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor package comprising:

• a package board including:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body, the first and second internal terminal pads being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the first internal terminal pad and the second internal terminal pad;
• and
• a semiconductor chip mounted on the package board, and including an internal power generator, an internal circuit, a first internal chip pad and a second internal chip pad,
• wherein:
• the first internal terminal pad is electrically connected to the first internal chip pad,
• the second internal terminal pad is electrically connected to the second internal chip pad,
• the first and second internal terminal pads are electrically insulated from the first power pad, the first ground pad and the first signal pad,
• the first internal chip pad is electrically connected to an output terminal of the internal power generator,
• the second internal chip pad is electrically connected to a power terminal of the internal circuit,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor package comprising:

• a package board including:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body, the first and second internal terminal pads being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the first internal terminal pad and the second internal terminal pad;
• and
• a semiconductor chip mounted on the package board, and including an internal power generator, an internal circuit, a first internal chip pad and a second internal chip pad,
• wherein:
• the first internal terminal pad is electrically connected to the first internal chip pad,
• the second internal terminal pad is electrically connected to the second internal chip pad,
• the first internal chip pad is electrically connected to an output terminal of the internal power generator,
• the second internal chip pad is electrically connected to a power terminal of the internal circuit,
• the first and second internal terminal pads are electrically insulated from the first power pad, the first ground pad and the first signal pad,
• the internal terminal interconnection is not electrically connected with conductive elements disposed on the back surface of the board body,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor package comprising:

• a package board including:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body, the first and second internal terminal pads being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the first internal terminal pad and the second internal terminal pad;
• and
• a semiconductor chip mounted on the package board, and including an internal power generator, an internal circuit, a first internal chip pad and a second internal chip pad,
• wherein:
• the first internal terminal pad is electrically connected to the first internal chip pad,
• the second internal terminal pad is electrically connected to the second internal chip pad,
• the first and second internal terminal pads are electrically insulated from the first power pad, the first ground pad and the first signal pad,
• the first internal chip pad is electrically connected to an output terminal of the internal power generator, and
• the second internal chip pad is electrically connected to a power terminal of the internal circuit,
• the internal power generator outputs an internal power voltage which is applied to the internal circuit,
• the internal terminal interconnection does not have a spiral geometry,
• the semiconductor chip further comprises an internal interconnection electrically connecting the output terminal of the internal power generator and the power terminal of the internal circuit through a path fully within the semiconductor chip;
• and
• a thickness of the internal terminal interconnection is greater than a thickness of the internal interconnection.

A semiconductor device comprising:

• a package board including:
• a board body having a front surface and a back surface;
• a first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad disposed on the front surface of the board body, the first and second internal terminal pads being configured to provide an internal power delivery function;
• a second power pad, a second ground pad and a second signal pad disposed on the back surface of the board body, the second power pad, the second ground pad and the second signal pad being electrically connected to the first power pad, the first ground pad and the first signal pad, respectively;
• and
• an internal terminal interconnection disposed in a bulk region of the board body or on the front surface of the board body to electrically connect the first internal terminal pad and the second internal terminal pad;
• and
• a semiconductor chip mounted on the package board, and including a first internal power generator, a second internal power generator, a first internal circuit, a second internal circuit, a first internal chip pad and a second internal chip pad,
• wherein:
• the first internal terminal pad is electrically connected to the first internal chip pad,
• the second internal terminal pad is electrically connected to the second internal chip pad,
• the first and second internal terminal pads are electrically insulated from the first power pad, the first ground pad and the first signal pad,
• the first internal chip pad is electrically connected to an output terminal of the first internal power generator,
• the second internal chip pad is electrically connected to an output terminal of the second internal power generator,
• the output terminal of the first internal power generator is electrically connected to a power terminal of the first internal circuit,
• the output terminal of the second internal power generator is electrically connected to a power terminal of the second internal circuit,
• the semiconductor chip further comprises a first internal interconnection electrically connecting the output terminal of the first internal power generator and the power terminal of the first internal circuit through a path fully within the semiconductor chip,
• the semiconductor chip further comprises a second internal interconnection electrically connecting the output terminal of the second internal power generator and the power terminal of the second internal circuit through a path fully within the semiconductor chip, and
• a thickness of the internal terminal interconnection is greater than a thickness of the first and second internal interconnections.