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US RE46,122 E1Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Tanaka, Shigehiko Saida, Yoshitaka Tsunashima
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Abstract
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Claims23
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a semiconductor substrate;
- and
- forming a silicon nitride insulation film on said semiconductor substrate by a low pressure chemical vapor deposition method using a compound having a Si—Si bond and a Si—Cl bond as a Si raw material, wherein
- said silicon nitride film is formed to cover the surfaces of said semiconductor substrate and a gate electrode formed on the semiconductor substrate, and said method further comprises the steps of:
- forming an interlayer insulating film on said silicon nitride film;
- and
- forming a through-hole extending through a portion of said interlayer insulating film and silicon nitride film to reach the surface of the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.