PMOS depletable drain extension made from NMOS dual depletable drain extensions
AssigneeIntersil Americas Inc.
InventorJames D. Beasom
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Abstract
In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device comprises a source doped to a first conductivity type, a drain extension doped to the first conductivity type separated from the source by a gate, and an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the gate. The integrated circuit structure also comprises a second complementary MOS device comprising a dual drain extension structure.
Claims29
A complementary integrated circuit structure comprising:
- a first MOS device comprising,
- a first gate;
- a source doped to a first conductivity type;
- a drain extension doped to the first conductivity type separated from the source by the first gate;
- a drain contact doped to the first conductivity type;
- and
- an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the first gate;
- a second complementary MOS device comprising,
- a second gate;
- a dual drain extension structure;
- and
- an island doped to the first conductivity type underlying the first gate and the second gate,
- wherein,
- the drain contact of the first MOS device contacts the island;
- and
- the first conductivity type is one of N-type and P-type, and the second conductivity type is the other one of N-type and P-type.
A complementary integrated circuit structure comprising:
- a first MOS device comprising,
- a first gate;
- a first source doped to a first conductivity type;
- a drain contact doped to the first conductivity type;
- and
- a single drain extension separated from the first source by a first gate;
- and
- a second complementary MOS device comprising;
- a second gate;
- a second source doped to a second conductivity type;
- a dual drain extension separated from the second source by a second gate,
- an island doped to the first conductivity type underlying the first gate and the second gate,
- wherein the first conductivity type is one of N-type and P-type, and the second conductivity type is the other one of N-type and P-type.
An integrated circuit structure comprising:
- a first MOS device comprising,
- a first gate;
- a first source doped to a first conductivity type;
- a first drain extension formed in a first layer, the first drain extension doped to the first conductivity type and separated from the first source by at least a portion of the first gate;
- and
- a first well region formed in a second layer underlying the first source and at least a portion of the first drain extension, the first well region doped to a second conductivity type;
- and
- the first MOS device further comprising a body contact formed in the first well region adjacent to the first source;
- and,
- at least a second MOS device comprising either a first region made from the first layer or a second region made from the second layer.
Dependencies are inferred from the claim text.