Process and material for manufacturing semiconductor devices
AssigneeLFE Corporation
InventorAdir Jacob
Life of this patent
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Abstract
A process step and material for use in the manufacture of semiconductor devices. To facilitate the removal of organic photoresist material from a substrate, the material is exposed to a low pressure rf generated "cold" plasma (under 32.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon, where the halocarbon is preferably a gas having one carbon atom per molecule and fully fluorine-substituted, and wherein the mixture contains at least 25% of oxygen by volume.
Claims7
A process for removing organic photoresist material from a substrate in a plasma environment, comprising the step of:
- exposing the material to a gaseous plasma formed from a binary mixture of oxygen and a halocarbon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms, and wherein oxygen constitutes at least 25% by volume of said binary mixture.
[5. A composition of matter useful for stripping organic photoresist material from a substrate in a plasma environment, said composition comprising a binary gaseous mixture of oxygen and a halocargon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms and wherein said oxygen comprises at least 25% by volume of said binary gaseous mixture]
[6. A composition of matter in accordance with claim 5 wherein said halocarbon is trifluoromethane.]
[7. A composition of matter in accordance with claim 5 wherein said halocarbon is tetrafluoromethane.]
Dependencies are inferred from the claim text.