Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition

A resist underlayer film composition comprising:

• a polymer for preparing a resist underlayer film including a repeating unit represented by Chemical Formula 1 below;
• and
• an organic solvent:
• in Chemical Formula 1,
• Ar is
• Z1 to Z4 are each independently C═O, NRa, O, S or CRbRc;
• Ra to Rc are each independently hydrogen, (C1-C10)alkyl, halogen, (C3-C10)cycloalkyl, or (C6-C20)aryl, and the alkyl, cycloalkyl, and aryl may be further substituted with one or more substituents selected from the group consisting of halogen, (C1-C10)alkyl, halo(C1-C10)alkyl, (C3-C10)cycloalkyl, and (C6-C20)aryl;
• Ar1 and Ar2 are each independently (C6-C30)arylene;
• L is
• Ar3 and Ar4 are each independently (C6-C30)arylene;
• Ar5 is trivalent (C6-C30)arylene;
• Ar6 is (C6-C30)aryl;
• the arylene of Ar3, Ar4 and Ar5, and the aryl of Ar6 may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C6-C20)aryl, (C1-C10)alkoxy, (C6-C20)aryloxy, (C1-C10)alkyl(C6-C20)aryl and (C6-C20)aryl(C1-C10)alkyl,
• R is hydrogen, (C1-C20)alkyl, (C3-C10)cycloalkyl or (C6-C20)aryl, and the alkyl, cycloalkyl, or aryl of R may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl and (C6-C20)aryl;
• w is an integer of 1 to 5;
• u is an integer of 0 or 1;
• and
• the heteroaryl and the heterocycloalkyl include one or more heteroatoms selected from B, N, O, S, P(═O), Si, Se and P.